A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

Field-effect transistors (FETs) are the cornerstone of modern electronic devices, providing the essential functionality for digital logic, analog processing and power management. The fundamental ...

Field-effect transistor (FET) devices based on functionalized nanocarbon materials are a promising technology for biomolecular sensing applications. Nanocarbon-based field-effect transistor (NC-FET) ...

A revolution in technology is on the horizon, and it’s poised to change the devices that we use. Under the distinguished leadership of Professor LEE Young Hee, a team of visionary researchers from the ...

Technology is about to undergo a revolution that will alter how devices are utilized. A group of brilliant scientists from the Institute for Basic Science (IBS) in South Korea, led by the esteemed ...

The formula for a perovskite compound is typically expressed as ABX3. These are crystalline structures that bond two cations ("A" and "B", divalent metal ion) to an anion ("X"); the "B" atoms tend to ...

Using a new fabrication technique, NIMS has developed a diamond field-effect transistor (FET) with high hole mobility, which allows reduced conduction loss and higher operational speed. This new FET ...

A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a fundamental building block of modern electronics. It is a field-effect transistor (FET) where the voltage applied to a terminal (gate) ...

Beyond-silicon technology demands ultra-high-performance field-effect transistors (FETs). Transition metal dichalcogenides (TMDs) provide an ideal material platform, but the device performances such ...

This research was published in Advanced Science ("High-temperature and high-electron mobility metal-oxide-semiconductor field-effect transistors based on n-type diamond"). World’s First N-Channel ...