SHANGHAI, China &#151 Memory maker Macronix International is working on a new Flash structure that will help break down barriers faced by today's floating gate technology when it scales to the 45 ...

LONDON—RRAM (resistive RAM), a non-volatile memory technology usually based on metallic oxide, is unlikely to enter the market until after the 11-nm node, according to Laith Altimime, director of the ...

Imec has successfully combined a HfAlO/Al2O3/HfAlO stack as an inter-gate dielectric with a Si/TiN hybrid floating gate in a planar NAND Flash structure, allowing further cell scaling. By optimizing ...