All power circuits primarily use switching devices made of silicon carbide and gallium nitride. Although such devices produce superior working speeds, high voltages, processed currents, and low power ...

If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it ...

Editor’s note: This month I am pleased to bring you a tech educational article by Ryan Schnell, an Analog Devices applications engineer. When driving medium to high powered MOSFETs and IGBTs, there is ...

In power electronics, for example, as found in drive technology, insulated gate bipolar transistors (IGBTs) are frequently used for high-voltage and high-current switching. These power transistors are ...

CISSOID unveils its 2nd generation of HADES®, the high-reliability, high voltage isolated gate driver chipset. HADES® drives both high efficiency Silicon Carbide (SiC) and traditional silicon power ...