Scientists at Forschungszentrum Jülich have fabricated a new type of transistor from a germanium–tin alloy that has several advantages over conventional switching elements. Charge carriers can move ...

AF114 germanium transistors and related ones like the AF115 through AF117 were quite popular during the 1960s, but they quickly developed a reputation for failure. This is due to what should have made ...

A Si–Gr–Ge transistor has been demonstrated. The Schottky emitter provides an emitter charging time of ~118 ps with a current of 692 A cm−2 and a capacitance of 41 nF cm−2, which is expected to ...

An important breakthrough has been reached in the development of energy-efficient electronic circuits using transistors based on germanium. A team of scientists from the Nanoelectronic Materials ...

At the Forschungszentrum Jülich, a new kind of transistor from germanium–tin alloy has been fabricated by scientists. The alloy comes with numerous benefits over traditional switching elements. The ...

Gordon Moore's visionary prediction, made in 1965, that the number of transistors on an integrated circuit chip would double every two years continues to be the main idea guiding the semiconductor ...

A germanium-based transistor that can be programmed between electron and hole conduction has been demonstrated by a team of scientists from the Nanoelectronic Materials Laboratory and the Centre for ...

(Nanowerk News) Over the past 70 years, the number of transistors on a chip has doubled approximately every two years – according to Moore’s Law, which is still valid today. The circuits have become ...

A team of scientists from the Nanoelectronic Materials Laboratory (NaMLab gGmbH) and the Cluster of Excellence Center for Advancing Electronics Dresden (cfaed) at the Dresden University of Technology ...