A research team led by Kyushu University has developed a new fabrication method for energy-efficient magnetic random-access memory (MRAM) using a new material called thulium iron garnet (TmIG) that ...
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Nanoelectromechanical systems (NEMS) represent a transformative approach in the design of memory and logic devices, offering unprecedented energy efficiency and integration potential with standard ...
This infographic outlines the background, methodologies, and results of this study, which advances our knowledge of materials for ultra-low-power ferroelectric memory devices. Researchers synthesize ...
Experts at the Table: Semiconductor Engineering sat down to talk about the impact of off-chip memory on power and heat, and what can be done to optimize performance, with Frank Ferro, group director, ...
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Companies Preview 10 th Generation 3D Flash Memory Technology Setting A New Benchmark for Performance, Power Efficiency and Bit Density SAN FRANCISCO--(BUSINESS WIRE)--Kioxia Corporation and Sandisk ...
A diagram of the material developed using on-axis magnetron sputtering. By applying a current through the platinum material on top of the TmIG, researchers were able to reverse the magnetization ...