(Nanowerk News) CEA-Leti announced today it has fabricated ultra-scaled split-gate memories with gate length of 16nm, and demonstrated their functionality, showing good writing and erasing ...
The devices, which operate on a heterojunction-gated (HG) structure, demonstrate high responsivity and detectivity while maintaining a simplified fabrication process. This approach avoids the ...
Researchers have developed a new fabrication process for high-speed graphene transistors using a nanowire as the self-aligned gate. This new technique does not produce any appreciable defects in the ...
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